PART |
Description |
Maker |
GS74108ATJ |
512K x 8 4Mb Asynchronous SRAM
|
GSI Technology
|
GS74108J GS74108TP |
512K x 8 4Mb Asynchronous SRAM
|
GSI Technology
|
GS74104J-12 GS74104J-10 GS74104J-10I GS74104J-12I |
10ns 1M x 4 4Mb asynchronous SRAM 8ns 1M x 4 4Mb asynchronous SRAM 12ns 1M x 4 4Mb asynchronous SRAM
|
http:// GSI Technology
|
GS74116U-8 GS74116J-10I GS74116TP-12I |
8ns 256K x 16 4Mb asynchronous SRAM 10ns 256K x 16 4Mb asynchronous SRAM 12ns 256K x 16 4Mb asynchronous SRAM
|
GSI Technology
|
GS74104ATJ |
1M x 4 4Mb Asynchronous SRAM
|
GSI Technology
|
M372V0405DT0-CFASTPAGEMODE |
4MB x 72 DRAM DIMM with ECC Using 4MB x 16 & 4MB x 4, 4KB Refresh, 3.3V Data Sheet
|
Samsung Electronic
|
N04L163WC1A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
N04L63W2AB27I N04L63W2AB27IT N04L63W2AT27I N04L63W |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 隆驴 16 bit 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit
|
ON Semiconductor
|
N08M1618L1AW N08M1618L1A N08M1618L1AB N08M1618L1AB |
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K × 16 bit 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K 】 16 bit 512K X 16 STANDARD SRAM, 150 ns, PBGA48 BGA-48
|
AMI[AMI SEMICONDUCTOR] Unisonic Technologies Co., Ltd.
|
N04L1630C2B |
4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K x 16 bit POWER SAVER TECHNOLOGY
|
AMI SEMICONDUCTOR
|
MAX9202 MAX9202ESD MAX9202EUD MAX9201ESE MAX9203ES |
Low-Cost, 7ns, Low-Power Voltage Comparators COMPARATOR, 7500 uV OFFSET-MAX, 7 ns RESPONSE TIME, PDSO8 Low-Cost, 7ns, Low-Power Voltage Comparators 低成本7ns、低功耗电压比较器 Low-Cost 7ns Low-Power Voltage Comparators
|
Maxim Integrated Products, Inc. MAXIM[Maxim Integrated Products] MAXIM - Dallas Semiconductor
|
IS61LV51216-10M IS61LV51216-10MI IS61LV51216-10T I |
512K x 16 HIGH SPEED ASYNCHRONOUS 12k × 16高速异
|
Electronic Theatre Controls, Inc. ISSI[Integrated Silicon Solution, Inc] ETC Integrated Silicon Solution Inc
|